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| BC846T...BC850T NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, BC858T, BC859T, BC860T BC846AT BC846BT BC847AT BC847BT BC847CT BC848AT BC848BT BC848CT BC849BT BC849CT BC850BT BC850CT 3 2 1 VPS05996 Type Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2cs 2Fs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 1 Aug-01-2002 BC846T...BC850T Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 109 C Junction temperature Storage temperature Thermal Resistance Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg RthJS BC846T 65 80 80 6 BC847T BC848T BC850T BC849T 45 50 50 6 100 200 200 200 250 150 -65 ... 150 30 30 30 5 Unit V mA mA mW C Junction - soldering point1) Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IC = 10 A, IE = 0 IC = 10 A, IE = 0 BC846T BC847T/BC850T BC848T/BC849T 165 Values K/W Unit max. V Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol min. V(BR)CEO 65 45 30 V(BR)CBO 80 50 30 typ. Collector-base breakdown voltage BC846T BC847T/850T BC848T/849T 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Aug-01-2002 BC846T...BC850T Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 A, VBE = 0 IC = 10 A, VBE = 0 IC = 10 A, VBE = 0 IE = 1 A, IC = 0 IE = 1 A, IC = 0 IE = 1 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 10 A, VCE = 5 V IC = 10 A, VCE = 5 V IC = 10 A, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1) Pulse test: t =300s, D = 2% Symbol min. V(BR)CES 65 50 30 V(BR)EBO 6 6 5 ICBO ICBO hFE hFE-group A hFE-group B hFE-group C hFE hFE-group A hFE-group B hFE-group C VCEsat VBEsat VBE(ON) 580 110 200 420 - Values typ. max. Unit V 15 5 nA A 140 250 480 180 290 520 90 200 700 900 660 220 450 800 mV 250 600 700 770 BC846T BC847T/850T BC848T/849T BC846T BC847T/BC850T BC848T/BC849T Emitter-base breakdown voltage Collector-emitter saturation voltage1) 3 Aug-01-2002 BC846T...BC850T Electrical Characteristicsat TA = 25C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A hFE-group B hFE-group C hFE-group A hFE-group B hFE-group C h12e h21e h22e 18 30 60 200 330 600 S 1.5 2 3 hFE-group A hFE-group B hFE-group C hFE-group A hFE-group B hFE-group C h11e 2.7 4.7 8.7 10-4 k Ceb 8 Ccb 3 pF fT 250 MHz Symbol min. Values typ. max. Unit Open-circuit reverse voltage transf.ratio Short-circuit forward current transf.ratio 4 Aug-01-2002 BC846T...BC850T Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter AC Characteristics Noise figure IC = 200 A, VCE = 5 V, RS = 2 k, IC = 200 A, VCE = 5 V, RS = 2 k, Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz BC850T F f = 200 Hz f = 200 Hz BC849T BC850T Vn 0.135 V 1.2 1 4 4 dB Symbol min. Values typ. max. Unit f = 1 kHz, f = 1 kHz, 5 Aug-01-2002 BC846T...BC850T Total power dissipation Ptot = f (TS ) Collector-base capacitance CCB = f (VCBO Emitter-base capacitance CEB = f (VEBO) BC 846...850 EHP00361 300 mW C CB0 ( C EB0 ) 12 pF 10 P tot 200 8 C EB 150 6 100 4 C CB 50 2 0 0 20 40 60 80 100 120 C 150 0 10 -1 5 10 0 V VCB0 TS 10 1 (VEB0 ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00363 Ptotmax / PtotDC fT 5 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 1 10 -1 5 10 0 5 10 1 mA 10 2 tp C 6 Aug-01-2002 BC846T...BC850T Collector cutoff current ICBO = f (TA ) VCB = 30V 10 4 nA EHP00381 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 2 EHP00367 CB0 10 3 5 10 5 10 1 5 10 5 10 -1 0 2 C mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C TA 150 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 EHP00365 Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 10 2 EHP00364 h FE 5 100 C 25 C C mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 C V BEsat 7 Aug-01-2002 BC846T...BC850T h parameter he = f (IC) normalized VCE = 5V EHP00368 h parameter he = f (VCE) normalized IC = 2mA EHP00369 10 2 he 5 2.0 he h 11e 1.5 C = 2 mA h 21 e h 11 e 10 1 5 h 12e VCE = 5 V 1.0 h 12 e h 22 e 10 0 h 21e 5 h 22e 10 -1 0 0.5 10 -1 5 10 0 mA 10 1 0 10 20 V VCE 30 C Noise figure F = f (VCE ) IC = 0.2mA, RS = 2k, f = 1kHz BC 846...850 EHP00370 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, R S = 2k BC 846...850 EHP00371 20 20 dB F dB F 15 15 10 10 5 5 0 10 -1 5 10 0 10 1 V VCE 10 2 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 8 Aug-01-2002 BC846T...BC850T Noise figure F = f (IC ) VCE = 5V, f = 120Hz BC 846...850 EHP00372 Noise figure F = f (IC) VCE = 5V, f = 1kHz BC 846...850 EHP00373 20 dB 20 dB F 15 RS = 1 M 100 k 10 k F 15 RS = 1 M 10 100 k 10 k 10 500 1 k 5 1 k 5 500 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C C Noise figure F = f (IC ) VCE = 5V, f = 10kHz BC 846...850 EHP00374 20 dB F 15 R S = 1 M 100 k 10 500 10 k 5 1 k 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C 9 Aug-01-2002 |
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